A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film
نویسندگان
چکیده
Van der Waals dielectrics, such as hexagonal boron nitride, are widely used to preserve the intrinsic properties of two-dimensional semiconductors in electronic devices. However, fabricating these materials on wafer scale and integrating them with is challenging because their synthesis typically requires mechanical exfoliation or vapour deposition processes. Here we show that a high-κ van dielectric can be created scales using an inorganic molecular crystal film antimony trioxide (Sb2O3) fabricated via thermal evaporation deposition. Monolayer molybdenum disulfide (MoS2) field-effect transistors supported by this substrate exhibit enhanced electron mobility—from 26 cm2 V−1 s−1 145 s−1—and reduced transfer-curve hysteresis compared when SiO2 substrate. MoS2 directly gated Sb2O3 operate supply voltage 0.8 V, on/off ratio 108 subthreshold swing 64 mV dec−1 at 300 K.
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ژورنال
عنوان ژورنال: Nature electronics
سال: 2021
ISSN: ['2520-1131']
DOI: https://doi.org/10.1038/s41928-021-00683-w